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Influence of the height difference between the first and second nitride layer on erosion and dishing in the dual nitride approach for shallow trench isolation

dc.contributor.authorHeylen, Nancy
dc.contributor.authorGrillaert, Joost
dc.contributor.authorVrancken, Evi
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorRooyackers, Rita
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-30T12:11:19Z
dc.date.available2021-09-30T12:11:19Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2632
dc.sourceIIOimport
dc.titleInfluence of the height difference between the first and second nitride layer on erosion and dishing in the dual nitride approach for shallow trench isolation
dc.typeProceedings paper
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage26
dc.source.endpage36
dc.source.conferenceProceedings of the 2nd International Symposium on Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing
dc.source.conferencedate5/05/1998
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 98-7


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