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Wafer preparation: ultra-clean processing and Si- material defects

dc.contributor.authorHeyns, Marc
dc.contributor.authorHattori, T.
dc.date.accessioned2021-09-30T12:12:29Z
dc.date.available2021-09-30T12:12:29Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2636
dc.sourceIIOimport
dc.titleWafer preparation: ultra-clean processing and Si- material defects
dc.typeProceedings paper
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage589
dc.source.endpage591
dc.source.conferenceSemiconductor Silicon 1998. Proceedings of the 8th International Symposium on Silicon Materials Science and Technology
dc.source.conferencedate4/05/1998
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 98-1


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