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Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

dc.contributor.authorBury, Erik
dc.contributor.authorKaczer, Ben
dc.contributor.authorLinten, Dimitri
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMertens, Hans
dc.contributor.authorWaldron, Niamh
dc.contributor.authorZhou, Daisy
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorSpessot, Alessio
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-23T10:10:59Z
dc.date.available2021-10-23T10:10:59Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26385
dc.sourceIIOimport
dc.titleSelf-heating in FinFET and GAA-NW using Si, Ge and III/V channels
dc.typeProceedings paper
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage400
dc.source.endpage403
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate4/12/2016
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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