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Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency

dc.contributor.authorCaparroz, Luis F.V.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorAgopian, Paula G.D.
dc.date.accessioned2021-10-23T10:11:19Z
dc.date.available2021-10-23T10:11:19Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26388
dc.sourceIIOimport
dc.titleProton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference31st Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate29/08/2016
dc.source.conferencelocationBrasilia Brazil
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7731357/
imec.availabilityPublished - open access


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