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Copper oxide direct bonding of 200 mm CMOS wafers with five metal levels and TSVs: morphological and electrical characterization

dc.contributor.authorCavaco, Celso
dc.contributor.authorPeng, Lan
dc.contributor.authorLavizzari, Simone
dc.contributor.authorClaes, Jesse
dc.contributor.authorVan Hoovels, Nele
dc.contributor.authorGuerrieri, Stefano
dc.contributor.authorSabuncuoglu Tezcan, Deniz
dc.contributor.authorOsman, Haris
dc.date.accessioned2021-10-23T10:12:20Z
dc.date.available2021-10-23T10:12:20Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26398
dc.sourceIIOimport
dc.titleCopper oxide direct bonding of 200 mm CMOS wafers with five metal levels and TSVs: morphological and electrical characterization
dc.typeProceedings paper
dc.contributor.imecauthorCavaco, Celso
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorClaes, Jesse
dc.contributor.imecauthorVan Hoovels, Nele
dc.contributor.imecauthorSabuncuoglu Tezcan, Deniz
dc.contributor.imecauthorOsman, Haris
dc.contributor.orcidimecCavaco, Celso::0000-0001-9079-338X
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.contributor.orcidimecSabuncuoglu Tezcan, Deniz::0000-0002-9237-7862
dc.source.peerreviewyes
dc.source.beginpage43
dc.source.endpage46
dc.source.conferenceProcessing Materials of 3D Interconnects, Damascene and Electronics Packaging 8
dc.source.conferencedate2/10/2016
dc.source.conferencelocationHonolulu, HI United States
dc.identifier.urlhttp://ecst.ecsdl.org/content/75/7/43.full.pdf+html
imec.availabilityPublished - imec


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