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Bulk defect induced low-frequency noise in n+-p silicon diodes

dc.contributor.authorHou, F. C.
dc.contributor.authorBosman, Gijs
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-09-30T12:13:29Z
dc.date.available2021-09-30T12:13:29Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2640
dc.sourceIIOimport
dc.titleBulk defect induced low-frequency noise in n+-p silicon diodes
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2528
dc.source.endpage2536
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue12
dc.source.volume45
imec.availabilityPublished - open access


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