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Oxygen chemical potential optimization for low current (<10μA) resistive switching in oxide-based RRAM

dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-23T10:16:00Z
dc.date.available2021-10-23T10:16:00Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26430
dc.sourceIIOimport
dc.titleOxygen chemical potential optimization for low current (<10μA) resistive switching in oxide-based RRAM
dc.typeProceedings paper
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecFantini, Andrea::0000-0002-3220-8856
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageT2-2
dc.source.conferenceInternational Symposium on VLSI Technology, Systems and Application - VLSI-TSA
dc.source.conferencedate25/04/2016
dc.source.conferencelocationHsinchu Taiwan
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7480500
imec.availabilityPublished - imec


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