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VFTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowires

dc.contributor.authorChen, Shih-Hung
dc.contributor.authorLinten, Dimitri
dc.contributor.authorHellings, Geert
dc.contributor.authorVeloso, Anabela
dc.contributor.authorScholz, Mirko
dc.contributor.authorBoschke, Roman
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T10:16:39Z
dc.date.available2021-10-23T10:16:39Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26435
dc.sourceIIOimport
dc.titleVFTLP characteristics of ESD devices in Si gate-all-around (GAA) nanowires
dc.typeProceedings paper
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage6A.2
dc.source.conference38th Electrical Overstress/Electrostatic Discharge Symposium - EOS/ESD
dc.source.conferencedate11/09/2016
dc.source.conferencelocationAnaheim, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7592555/?tp=&arnumber=7592555
imec.availabilityPublished - imec


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