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dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorKujala, Jiri
dc.contributor.authorSlotte, Jonatan
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorIacovo, Serena
dc.contributor.authorStesmans, Andre
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-23T10:36:39Z
dc.date.available2021-10-23T10:36:39Z
dc.date.issued2016
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26557
dc.sourceIIOimport
dc.titleOn the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorIacovo, Serena
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecIacovo, Serena::0000-0002-0826-9165
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage82106
dc.source.journalApplied Physics Letters
dc.source.issue8
dc.source.volume108
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/108/8/10.1063/1.4942605
imec.availabilityPublished - imec


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