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Electron microscopic studies of Co- and Ti-germanosilicide films formed on SiGe layers

dc.contributor.authorJin, S.
dc.contributor.authorDonaton, R. A.
dc.contributor.authorBender, Hugo
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-09-30T12:17:36Z
dc.date.available2021-09-30T12:17:36Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2656
dc.sourceIIOimport
dc.titleElectron microscopic studies of Co- and Ti-germanosilicide films formed on SiGe layers
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage133
dc.source.endpage138
dc.source.conferenceElectron Microscopy of Semiconducting Materials and ULSI Devices
dc.source.conferencedate15/04/1998
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 523


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