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Effects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs

dc.contributor.authorDuan, Guo Xing
dc.contributor.authorHachtel, Jordan
dc.contributor.authorZhang, En Xia
dc.contributor.authorZhang, Cher Xuan
dc.contributor.authorFleetwood, Daniel
dc.contributor.authorSchrimpf, Ronald
dc.contributor.authorReed, Robert
dc.contributor.authorMitard, Jerome
dc.contributor.authorLinten, Dimitri
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.contributor.authorChisholm, Matthew
dc.contributor.authorPantelides, Sokrates
dc.date.accessioned2021-10-23T10:41:16Z
dc.date.available2021-10-23T10:41:16Z
dc.date.issued2016
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26581
dc.sourceIIOimport
dc.titleEffects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs
dc.typeJournal article
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage541
dc.source.endpage548
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue4
dc.source.volume16
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7572180/
imec.availabilityPublished - open access


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