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Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging

dc.contributor.authorDuan, Meng
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorJi, Zhigang
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorVigar, David
dc.contributor.authorAsen, Asenov
dc.contributor.authorGerrer, Louis
dc.contributor.authorChandra, Vikas
dc.contributor.authorAitken, Rob
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-23T10:41:29Z
dc.date.available2021-10-23T10:41:29Z
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26582
dc.sourceIIOimport
dc.titleInsight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3642
dc.source.endpage3648
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume63
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7530843/
imec.availabilityPublished - open access


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