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Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation

dc.contributor.authorDuan, N.
dc.contributor.authorLuo, J.
dc.contributor.authorWang, G.
dc.contributor.authorLiu, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMao, S.
dc.contributor.authorRadamson, H.
dc.contributor.authorWang, X.
dc.contributor.authorLi, J.
dc.contributor.authorWang, W.
dc.contributor.authorZhao, C.
dc.contributor.authorYe, T.
dc.date.accessioned2021-10-23T10:41:42Z
dc.date.available2021-10-23T10:41:42Z
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26583
dc.sourceIIOimport
dc.titleReduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4546
dc.source.endpage4549
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue11
dc.source.volume63
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7579625/
imec.availabilityPublished - open access


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