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Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation
Publication:
Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation
Date
2016
Journal article
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35533.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Duan, N.
;
Luo, J.
;
Wang, G.
;
Liu, J.
;
Simoen, Eddy
;
Mao, S.
;
Radamson, H.
;
Wang, X.
;
Li, J.
;
Wang, W.
;
Zhao, C.
;
Ye, T.
Journal
IEEE Transactions on Electron Devices
Abstract
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1932
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations
Metrics
Views
1932
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations