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Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation

Date

2016
Journal article
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dc.contributor.authorDuan, N.
dc.contributor.authorLuo, J.
dc.contributor.authorWang, G.
dc.contributor.authorLiu, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMao, S.
dc.contributor.authorRadamson, H.
dc.contributor.authorWang, X.
dc.contributor.authorLi, J.
dc.contributor.authorWang, W.
dc.contributor.authorZhao, C.
dc.contributor.authorYe, T.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-23T10:41:42Z
dc.date.available2021-10-23T10:41:42Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26583
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7579625/
dc.source.beginpage4546
dc.source.endpage4549
dc.source.issue11
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume63
dc.title

Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation

dc.typeJournal article
dspace.entity.typePublication
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