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Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors

dc.contributor.authorEickelkamp, Martin
dc.contributor.authorFahle, Dirk
dc.contributor.authorMauder, Christof
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorZhao, Ming
dc.contributor.authorLiang, Hu
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorPosthuma, Niels
dc.contributor.authorHeuken, Michael
dc.date.accessioned2021-10-23T10:43:33Z
dc.date.available2021-10-23T10:43:33Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26592
dc.sourceIIOimport
dc.titleGrowth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
dc.typeMeeting abstract
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.source.peerreviewyes
dc.source.conferenceDGKK-Workshop
dc.source.conferencedate8/12/2016
dc.source.conferencelocationDuisburg - Neudorf-Süd Germany
imec.availabilityPublished - imec


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