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Impact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs

dc.contributor.authorFang, Wen
dc.contributor.authorVeloso, Anabela
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCho, Moon Ju
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorLuo, Jun
dc.contributor.authorZhao, Chao
dc.contributor.authorYe, T.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-23T10:47:20Z
dc.date.available2021-10-23T10:47:20Z
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26609
dc.sourceIIOimport
dc.titleImpact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs
dc.typeJournal article
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage363
dc.source.endpage365
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume37
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7421986
imec.availabilityPublished - open access


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