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3D dopant profiling in silicon nanowires

dc.contributor.authorFleischmann, Claudia
dc.contributor.authorMelkonyan, Davit
dc.contributor.authorArnoldi, Laurent
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorKumar, Arul
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-23T10:51:03Z
dc.date.available2021-10-23T10:51:03Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26625
dc.sourceIIOimport
dc.title3D dopant profiling in silicon nanowires
dc.typeOral presentation
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.source.peerreviewno
dc.source.conferenceEuropean Atom Probe Tomography Workshop
dc.source.conferencedate20/09/2016
dc.source.conferencelocationOxford UK
imec.availabilityPublished - imec


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