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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorVais, Abhitosh
dc.contributor.authorAlian, AliReza
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorSioncke, Sonja
dc.contributor.authorWaldron, Niamh
dc.contributor.authorZhou, Daisy
dc.contributor.authorNyns, Laura
dc.contributor.authorMitard, Jerome
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T10:52:18Z
dc.date.available2021-10-23T10:52:18Z
dc.date.issued2016
dc.identifier.issn2059-8521
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26630
dc.sourceIIOimport
dc.titleBias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
dc.typeJournal article
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.source.peerreviewyes
dc.source.beginpage3329
dc.source.endpage3340
dc.source.journalMRS Advances
dc.source.issue49
dc.source.volume1
dc.identifier.urlhttps://www.cambridge.org/core/journals/mrs-advances/article/div-classtitlefromPage=online&aid=10333231&fileId=S205985211600387X
imec.availabilityPublished - imec


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