Publication:
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Date
Loading...
Journal
Abstract
Description
Metrics
Views
1952 since deposited on 2021-10-23
Acq. date: 2025-12-11
Citations
Metrics
Views
1952 since deposited on 2021-10-23
Acq. date: 2025-12-11
Citations