Publication:

Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

Date

2016
Journal article
Simple item page Full metadata Statistics
Loading...
Thumbnail Image

Author(s)

Franco, Jacopo  
;
Kaczer, Ben  
;
Vais, Abhitosh  
;
Alian, AliReza  
;
Arimura, Hiroaki  
;
Putcha, Vamsi  
;
Sioncke, Sonja
;
Waldron, Niamh  
;
Zhou, Daisy  
;
Nyns, Laura  
;
Mitard, Jerome  
;
Heyns, Marc  
;
Groeseneken, Guido  
;
Collaert, Nadine  
;
Linten, Dimitri  
;
Thean, Aaron  

Journal

MRS Advances

Abstract

Description

Statistics

Views

1957 since deposited on 2021-10-23
3last month
Acq. date: 2026-02-24

Citations

Statistics

Views

1957 since deposited on 2021-10-23
3last month
Acq. date: 2026-02-24

Citations