Publication:

Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

Date

2016

Journal article

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Author(s)

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Arimura, Hiroaki

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Mitard, Jerome

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Heyns, Marc

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Groeseneken, Guido

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Collaert, Nadine

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Linten, Dimitri

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Journal

MRS Advances

Statistics

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Acq. date: 2026-04-27