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Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

Date

2016
Journal article
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorVais, Abhitosh
dc.contributor.authorAlian, AliReza
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorSioncke, Sonja
dc.contributor.authorWaldron, Niamh
dc.contributor.authorZhou, Daisy
dc.contributor.authorNyns, Laura
dc.contributor.authorMitard, Jerome
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-23T10:52:18Z
dc.date.available2021-10-23T10:52:18Z
dc.date.issued2016
dc.identifier.issn2059-8521
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26630
dc.identifier.urlhttps://www.cambridge.org/core/journals/mrs-advances/article/div-classtitlefromPage=online&aid=10333231&fileId=S205985211600387X
dc.source.beginpage3329
dc.source.endpage3340
dc.source.issue49
dc.source.journalMRS Advances
dc.source.volume1
dc.title

Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

dc.typeJournal article
dspace.entity.typePublication
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