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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorMertens, Hans
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorMukhopadhyay, Subhadeep
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorRoussel, Philippe
dc.contributor.authorBury, Erik
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T10:52:52Z
dc.date.available2021-10-23T10:52:52Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26632
dc.sourceIIOimport
dc.titleNBTI in replacement metal gate SiGe core finFETs: impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneal
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4B.2
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate17/04/2016
dc.source.conferencelocationPasadena, CA USA
imec.availabilityPublished - open access


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