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The optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface

dc.contributor.authorKim, Young-Chang
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorConard, Thierry
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-09-30T12:19:24Z
dc.date.available2021-09-30T12:19:24Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2663
dc.sourceIIOimport
dc.titleThe optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface
dc.typeOral presentation
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.conference4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
imec.availabilityPublished - imec
imec.internalnotesPubl. in 1999; Zie C3520


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