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Use of high order precursors for manufacturing gate all around devices

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorMertens, Hans
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-23T11:15:59Z
dc.date.available2021-10-23T11:15:59Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26724
dc.sourceIIOimport
dc.titleUse of high order precursors for manufacturing gate all around devices
dc.typeProceedings paper
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage2
dc.source.conferenceInternational SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate7/06/2016
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - open access


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