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Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorTallarico, Andrea
dc.contributor.authorWellekens, Dirk
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T11:22:19Z
dc.date.available2021-10-23T11:22:19Z
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26746
dc.sourceIIOimport
dc.titleStatistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage3451
dc.source.endpage3458
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume63
dc.identifier.urlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7517385
imec.availabilityPublished - imec


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