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Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T11:23:10Z
dc.date.available2021-10-23T11:23:10Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26749
dc.sourceIIOimport
dc.titleImpact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination
dc.typeMeeting abstract
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.conferenceCompound Semiconductor Week - CSW
dc.source.conferencedate26/06/2016
dc.source.conferencelocationToyama Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7528735/?arnumber=7528735
imec.availabilityPublished - imec


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