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Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects

dc.contributor.authorIke, Shinichi
dc.contributor.authorSimoen, Eddy
dc.contributor.authorShimura, Yosuke
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorTakeuchi, Wakana
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorZaima, Shigeaki
dc.date.accessioned2021-10-23T11:27:14Z
dc.date.available2021-10-23T11:27:14Z
dc.date.issued2016
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26763
dc.sourceIIOimport
dc.titleInfluence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage04EJ11
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue4S
dc.source.volume55
dc.identifier.urlhttp://iopscience.iop.org/article/10.7567/JJAP.55.04EJ11
imec.availabilityPublished - imec


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