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Growth mechanisms for Si epitaxy on O atomic layers: impact of O-content and surface structure

dc.contributor.authorJayachandran, Suseendran
dc.contributor.authorBillen, Arne
dc.contributor.authorDouhard, Bastien
dc.contributor.authorConard, Thierry
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorMoussa, Alain
dc.contributor.authorCaymax, Matty
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.contributor.authorDelabie, Annelies
dc.date.accessioned2021-10-23T11:32:46Z
dc.date.available2021-10-23T11:32:46Z
dc.date.issued2016
dc.identifier.issn0169-4332
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26782
dc.sourceIIOimport
dc.titleGrowth mechanisms for Si epitaxy on O atomic layers: impact of O-content and surface structure
dc.typeJournal article
dc.contributor.imecauthorJayachandran, Suseendran
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.source.peerreviewyes
dc.source.beginpage152
dc.source.endpage160
dc.source.journalApplied Surface Science
dc.source.volume384
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0169433216309205
imec.availabilityPublished - imec


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