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Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass

dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorChiarella, Thomas
dc.contributor.authorDe Roest, David
dc.contributor.authorBlanquart, Timothee
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorKenis, Karine
dc.contributor.authorPeter, Antony
dc.contributor.authorOng, Patrick
dc.contributor.authorVan Besien, Els
dc.contributor.authorTao, Zheng
dc.contributor.authorKim, Min-Soo
dc.contributor.authorKubicek, Stefan
dc.contributor.authorChew, Soon Aik
dc.contributor.authorSchram, Tom
dc.contributor.authorDemuynck, Steven
dc.contributor.authorMocuta, Anda
dc.contributor.authorMocuta, Dan
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-23T11:47:14Z
dc.date.available2021-10-23T11:47:14Z
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26829
dc.sourceIIOimport
dc.titleElectrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass
dc.typeJournal article
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorDe Roest, David
dc.contributor.imecauthorBlanquart, Timothee
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorPeter, Antony
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorVan Besien, Els
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecVan Besien, Els::0000-0002-5174-2229
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage1084
dc.source.endpage1087
dc.source.journalIEEE Electron Device Letters
dc.source.issue9
dc.source.volume37
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7508380/?arnumber=7508380
imec.availabilityPublished - imec


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