Show simple item record

Explanation of the "long distance" Vt roll-off in deep submicron nMOS transistors with Indium channel

dc.contributor.authorKubicek, Stefan
dc.contributor.authorLyu, Jeong-ho
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-09-30T12:24:55Z
dc.date.available2021-09-30T12:24:55Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2684
dc.sourceIIOimport
dc.titleExplanation of the "long distance" Vt roll-off in deep submicron nMOS transistors with Indium channel
dc.typeProceedings paper
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpage368
dc.source.endpage371
dc.source.conferenceProceedings of the 28th European Solid-State Device Research Conference - ESSDERC'98; 8-10 Sept. 1998; Bordeaux, France.
dc.source.conferencelocation
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record