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Selective epitaxial growth (SEG) of p-GaN gate layer for enhancement mode GaN/AlGaN HEMT

dc.contributor.authorLiang, Hu
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T12:13:25Z
dc.date.available2021-10-23T12:13:25Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26909
dc.sourceIIOimport
dc.titleSelective epitaxial growth (SEG) of p-GaN gate layer for enhancement mode GaN/AlGaN HEMT
dc.typeMeeting abstract
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageTu-P.011
dc.source.conference33rd International Conference on the Physics of Semiconductors - ICPS
dc.source.conferencedate31/07/2016
dc.source.conferencelocationBeijing China
imec.availabilityPublished - open access


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