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Comprehensive understanding of charge lateral migration in 3D SONOS memories

dc.contributor.authorLiu, Lifang
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorPan, Liyang
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-23T12:16:55Z
dc.date.available2021-10-23T12:16:55Z
dc.date.issued2016
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26919
dc.sourceIIOimport
dc.titleComprehensive understanding of charge lateral migration in 3D SONOS memories
dc.typeJournal article
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewyes
dc.source.beginpage95
dc.source.endpage99
dc.source.journalSolid-State Electronics
dc.source.volume116
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S003811011500355X
imec.availabilityPublished - imec


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