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High-current InP-based triple heterojunction tunnel transistors

dc.contributor.authorLong, Pengyu
dc.contributor.authorHuang, Jun
dc.contributor.authorPovolotskyi, Michael
dc.contributor.authorVerreck, Devin
dc.contributor.authorKlimeck, Gerhard
dc.contributor.authorRodwell, Mark
dc.date.accessioned2021-10-23T12:19:02Z
dc.date.available2021-10-23T12:19:02Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26925
dc.sourceIIOimport
dc.titleHigh-current InP-based triple heterojunction tunnel transistors
dc.typeProceedings paper
dc.contributor.imecauthorVerreck, Devin
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage2
dc.source.conference28th International Conference on Indium Phosphide and Related Materials - IPRM
dc.source.conferencedate26/06/2016
dc.source.conferencelocationToyama Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/abstract/document/7528592/?section=abstract
imec.availabilityPublished - open access


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