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Saturation Photo-Voltage methodology for semiconductor insulator interface trap spectroscopy

dc.contributor.authorMadia, Oreste
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorCott, Daire
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorSchulte-Braucks, C.
dc.contributor.authorLin, Dennis
dc.contributor.authorBuca, D.
dc.contributor.authorVon Den Driesch, N.
dc.contributor.authorNyns, Laura
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorCuypers, Dieter
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-23T12:23:22Z
dc.date.available2021-10-23T12:23:22Z
dc.date.issued2016
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26937
dc.sourceIIOimport
dc.titleSaturation Photo-Voltage methodology for semiconductor insulator interface trap spectroscopy
dc.typeJournal article
dc.contributor.imecauthorMadia, Oreste
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorCuypers, Dieter
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecCuypers, Dieter::0000-0003-0550-6273
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageP3031
dc.source.endpageP3036
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.issue4
dc.source.volume5
dc.identifier.urlhttp://jss.ecsdl.org/content/5/4/P3031.abstract
imec.availabilityPublished - open access


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