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Ge1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor

dc.contributor.authorMargetis, Joe
dc.contributor.authorMosleh, Aboozar
dc.contributor.authorGhetmiri, Seyed Amir
dc.contributor.authorBhargava, Nupur
dc.contributor.authorYu, Shui-Qing
dc.contributor.authorProfijt, Harald
dc.contributor.authorKohen, David
dc.contributor.authorLoo, Roger
dc.contributor.authorVohra, Anurag
dc.contributor.authorTolle, John
dc.date.accessioned2021-10-23T12:31:16Z
dc.date.available2021-10-23T12:31:16Z
dc.date.issued2016-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26959
dc.sourceIIOimport
dc.titleGe1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVohra, Anurag
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.source.peerreviewyes
dc.source.beginpage4
dc.source.endpage5
dc.source.conference7th International Symposium on Control of Semiconductor Interfaces / International Si Technology and Device Meeting
dc.source.conferencedate7/06/2016
dc.source.conferencelocationNagoya Japan
imec.availabilityPublished - imec


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