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New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study

dc.contributor.authorMei, S
dc.contributor.authorBosman, M.
dc.contributor.authorRaghavan, N.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorPey, K.L.
dc.date.accessioned2021-10-23T12:41:10Z
dc.date.available2021-10-23T12:41:10Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26987
dc.sourceIIOimport
dc.titleNew understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study
dc.typeProceedings paper
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage397
dc.source.endpage398
dc.source.conferenceIEEE International Devices Meeting - IEDM
dc.source.conferencedate3/12/2016
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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