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Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs

dc.contributor.authorMendes Bordallo, Caio Cesar
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorAlian, AliReza
dc.contributor.authorMols, Yves
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T12:44:15Z
dc.date.available2021-10-23T12:44:15Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26995
dc.sourceIIOimport
dc.titleImpact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
dc.typeProceedings paper
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1
dc.source.endpage3
dc.source.conference2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
dc.source.conferencedate10/10/2016
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7804393
imec.availabilityPublished - open access


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