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Reliability and parasitic issues in GaN-based power HEMTs

dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorRossetto, Isabella
dc.contributor.authorBisi, Davide
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-23T12:46:17Z
dc.date.available2021-10-23T12:46:17Z
dc.date.issued2016
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27000
dc.sourceIIOimport
dc.titleReliability and parasitic issues in GaN-based power HEMTs
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage93004
dc.source.journalSemiconductor Science and Technology
dc.source.issue9
dc.source.volume31
dc.identifier.urlhttp://dx.doi.org/10.1088/0268-1242/31/9/093004
imec.availabilityPublished - imec


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