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Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

dc.contributor.authorMeneghini, Matteo
dc.contributor.authorRossetto, Isabella
dc.contributor.authorBisi, Davide
dc.contributor.authorRuzzarin, Maria
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorStoffels, Steve
dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-23T12:47:04Z
dc.date.available2021-10-23T12:47:04Z
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27002
dc.sourceIIOimport
dc.titleNegative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs
dc.typeJournal article
dc.contributor.imecauthorRuzzarin, Maria
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage474
dc.source.endpage476
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume37
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7407598
imec.availabilityPublished - open access


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