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Gate stability of GaN-based HEMTs with p-type gate

dc.contributor.authorMeneghini, Matteo
dc.contributor.authorRossetto, Isabella
dc.contributor.authorRizzato, Vanessa
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-23T12:47:28Z
dc.date.available2021-10-23T12:47:28Z
dc.date.issued2016
dc.identifier.issn2079-9292
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27003
dc.sourceIIOimport
dc.titleGate stability of GaN-based HEMTs with p-type gate
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage10.3390/electron
dc.source.journalElectronics
dc.source.issue2
dc.source.volume5
dc.identifier.urlhttp://www.mdpi.com/2079-9292/5/2/14
imec.availabilityPublished - open access


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