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New opportunities in device scaling: How the high performing strained Ge pFINFET can help the space industry?
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New opportunities in device scaling: How the high performing strained Ge pFINFET can help the space industry?
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Date
2016
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33657.pdf
286 KB
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mitard, Jerome
;
Witters, Liesbeth
;
Collaert, Nadine
;
Linten, Dimitri
;
Eneman, Geert
;
Claeys, Cor
;
Heyns, Marc
;
Mocuta, Anda
;
Thean, Aaron
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1906
since deposited on 2021-10-23
1
last month
Acq. date: 2026-01-09
Citations