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dc.contributor.authorMohammed, Mazharuddin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVerreck, Devin
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSoree, Bart
dc.contributor.authorVan de Put, Maarten
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-23T12:56:40Z
dc.date.available2021-10-23T12:56:40Z
dc.date.issued2016
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27027
dc.sourceIIOimport
dc.titleElectric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides
dc.typeJournal article
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage245704
dc.source.journalJournal of Applied Physics
dc.source.issue24
dc.source.volume120
dc.identifier.urlhttp://aip.scitation.org/doi/10.1063/1.4972482
imec.availabilityPublished - open access


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