Show simple item record

Fundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices

dc.contributor.authorMukhopadhyay, Subhadeep
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLinten, Dimitri
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-23T13:05:38Z
dc.date.available2021-10-23T13:05:38Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27051
dc.sourceIIOimport
dc.titleFundamental study of the apparent voltage-dependence of NBTI kinetics by constant electric field stress in Si and SiGe devices
dc.typeProceedings paper
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage5A.3
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate16/04/2016
dc.source.conferencelocationPasadena, CA USA
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
33757.pdf
Size:
495.4Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record