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Atomically controlled processing for Si and Ge CVD epitaxial growth

dc.contributor.authorMurota, Junichi
dc.contributor.authorYamamoto, Yuchi
dc.contributor.authorCostina, Ioan
dc.contributor.authorTillack, Bernd
dc.contributor.authorLe Thanh, Vin
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-23T13:08:52Z
dc.date.available2021-10-23T13:08:52Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27059
dc.sourceIIOimport
dc.titleAtomically controlled processing for Si and Ge CVD epitaxial growth
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage71
dc.source.endpage82
dc.source.conferenceDielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing
dc.source.conferencedate29/05/2016
dc.source.conferencelocationSan Dego, CA usa
dc.identifier.urlhttp://ecst.ecsdl.org/content/72/2/71.abstract
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 72, Issue 2


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