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Split-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last process

dc.contributor.authorOliveira, Alberto V.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorMartino, Joao A
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-23T13:21:36Z
dc.date.available2021-10-23T13:21:36Z
dc.date.issued2016
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27092
dc.sourceIIOimport
dc.titleSplit-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last process
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage114002
dc.source.journalSemiconductor Science and Technology
dc.source.issue11
dc.source.volume31
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/0268-1242/31/11/114002/pdf
imec.availabilityPublished - open access


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