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Reduction of plasma process induced damage during gate poly etching by using the SiO2 hard maks

dc.contributor.authorLee, Hean-Cheal
dc.contributor.authorCreusen, Martin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVanhaelemeersch, Serge
dc.date.accessioned2021-09-30T12:32:33Z
dc.date.available2021-09-30T12:32:33Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2713
dc.sourceIIOimport
dc.titleReduction of plasma process induced damage during gate poly etching by using the SiO2 hard maks
dc.typeProceedings paper
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage72
dc.source.endpage75
dc.source.conferenceProceedings of the 3rd International Symposium on Plasma-Induced Damage - P2ID
dc.source.conferencedate4/06/1998
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access


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