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Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

dc.contributor.authorPosthuma, Niels
dc.contributor.authorYou, Shuzhen
dc.contributor.authorLiang, Hu
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorKang, Xuanwu
dc.contributor.authorWellekens, Dirk
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-23T13:52:24Z
dc.date.available2021-10-23T13:52:24Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27167
dc.sourceIIOimport
dc.titleImpact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
dc.typeProceedings paper
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage95
dc.source.endpage98
dc.source.conference28th IEEE International Symposium on Power Semiconductor Devices and ICs - ISPSD
dc.source.conferencedate12/06/2016
dc.source.conferencelocationPrague Czech Republic
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7520786
imec.availabilityPublished - open access


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