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A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs

dc.contributor.authorProcel, Luis Miguel
dc.contributor.authorCrupi, Felice
dc.contributor.authorLionel, Trojman
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-23T13:52:48Z
dc.date.available2021-10-23T13:52:48Z
dc.date.issued2016
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27168
dc.sourceIIOimport
dc.titleA defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage98
dc.source.endpage100
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue1
dc.source.volume16
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7362163/
imec.availabilityPublished - open access


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