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Articles
A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
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A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs
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Date
2016
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Procel, Luis Miguel
;
Crupi, Felice
;
Lionel, Trojman
;
Franco, Jacopo
;
Kaczer, Ben
Journal
IEEE Transactions on Device and Materials Reliability
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1931
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Acq. date: 2026-01-11
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Metrics
Views
1931
since deposited on 2021-10-23
1
last month
Acq. date: 2026-01-11
Citations